TSMC Confirms No Immediate Need for High-NA EUV Tools at European Technology Symposium
Amsterdam, Netherlands – At the European Technology Symposium, TSMC reaffirmed its position regarding next-generation High-NA EUV lithography systems, stating that these advanced tools are not necessary for the company’s upcoming process technologies, including the A16 (1.6nm-class) and A14 (1.4nm-class).
Kevin Zhang, Deputy Co-COO and Senior VP of Business Development and Global Sales, emphasized that TSMC will adopt High-NA EUV only when it can provide measurable benefits. "The enhancements we achieve with A14 are substantial without relying on High-NA," Zhang noted. The A14 process utilizes advanced second-generation nanosheet gate-all-around transistors and a redesigned standard cell architecture. This innovative approach yields a 15% performance increase at the same power, or a 25-30% reduction in power consumption at consistent frequencies. Notably, A14 boasts a 20% increase in transistor density over the N2 process.
Despite the advances represented by A14’s capabilities, TSMC’s strategy allows them to attain predictable yields and performance without the latest High-NA EUV lithography systems. A16 is essentially an enhancement of the existing N2P technology, including a Super Power Rail (SPR) power delivery network, and will utilize existing EUV tools.
Zhang highlighted TSMC’s commitment to innovation, noting that the company has found ways to produce chips at 1.4nm resolution without High-NA, which he deemed a significant achievement. While TSMC does not foresee the necessity of High-NA EUV for the foreseeable future—potentially until 2030 or later—it is clear that they prioritize maximizing efficiency and return on investment in their production processes.
In contrast, competitors like Intel expect to incorporate next-generation EUV lithography by 2027-2028, underscoring TSMC’s distinctive approach in the fast-evolving semiconductor landscape.
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